MACOM RF Power Transistor NPA1006A

The NPA1006A is a GaN on silicon amplifieroptimized for 20 - 1000 MHz operation. Thisamplifier has been designed for saturated and linearoperation with output levels to 12.5 W (41 dBm)assembled in a lead-free 6 x 5 mm 8-lead PDFNplastic package.

The NPA1006A is ideally suited for general purposenarrowband to broadband applications in test andmeasurement, defense communications, landmobile radio and wireless infrastructure.

RF Amplifier Transistor,PA,28V,12.5W,20-1000MHz Product overview: NPA1006A from MACOM Technology Solutions is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V, 12.5W, 1000MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 28V, 12.5W, 1000MHz, Bipolar Transistor, RF Amplifiers. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 860-NPA1006A can be used for catalog matching and distributor lookup.