MACOM RF Power Transistor NPT25100B

Description
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
  • RF Power Transistor - NPT25100B - Richardson RFPD
    Richardson RFPD
Request a Quote Datasheet
Description
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Request a Quote Datasheet

Suppliers

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Product
Description
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RF Power Transistor - NPT25100B - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
NPT25100B
RF Power Transistor NPT25100B
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology

Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number NPT25100B
Product Name RF Power Transistor
Transistor Technology / Material GaN
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