The NPT25100B is a GaN on silicon HEMT D-Mode power amplifier designed for 2.1 to 2.7 GHz operation, delivering 90 W CW output power and 125 W peak envelope power with 16.5 dB gain and 26% drain efficiency at 28 V. It is housed in a standard flange package with thermally enhanced design and gold metallization for high reliability. The device operates from -40°C to +85°C and meets RoHS compliance. Thermal resistance is 1.75 °C/W, and it is rated for 100 V drain-source voltage with a maximum junction temperature of 200°C.
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | NPT25100B |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
