Mitsubishi Electric & Electronics USA, Inc. Power IPM Transistor PS22A73

Description
DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed­back. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.
  • Power IPM Transistor - PS22A73 - Richardson RFPD
    Richardson RFPD
  • Igbt Module, 1.2Kv, 10A, Dip; Continuous Collector Current Mitsubishi Electric - 16R1507 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed­back. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Power IPM Transistor - PS22A73 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IPM Transistor
PS22A73
Power IPM Transistor PS22A73
DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed­back. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.

DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed­back. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.

Supplier's Site Datasheet
Igbt Module, 1.2Kv, 10A, Dip; Continuous Collector Current Mitsubishi Electric - 16R1507 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1.2Kv, 10A, Dip; Continuous Collector Current Mitsubishi Electric
16R1507
Igbt Module, 1.2Kv, 10A, Dip; Continuous Collector Current Mitsubishi Electric 16R1507
IGBT MODULE, 1.2kV, 10A, DIP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:66.2W; Operating Temperature Max:100°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, 1.2kV, 10A, DIP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:66.2W; Operating Temperature Max:100°C; IGBT Termination:Solder; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number PS22A73 16R1507
Product Name Power IPM Transistor Igbt Module, 1.2Kv, 10A, Dip; Continuous Collector Current Mitsubishi Electric
Transistor Type Power IPM Transistor
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