Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120VR1M11CT6AG

Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High-power and high-efficiency rectifiers and converters Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Power factor correction Switched mode power supplies Uninterruptible power supplies

MOSFET 2N-CH 1200V 251A