Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120XM31RTBL3NG

The MSCSM120XM31RTBL3NG is a three-phase bridge silicon carbide (SiC) MOSFET power module rated for 1200 V and 79 A continuous drain current at 25 °C, designed for high-reliability drive systems, medium and heavy drones, and aircraft actuation systems. It features a baseless isolated package with 32.5 g weight, direct heatsink mounting, and a mounting torque of 0.7 to 0.9 N•m. The module includes Kelvin source terminals, an internal NTC thermistor, and a SiN substrate with thick copper for improved thermal performance. Its typical junction-to-heatsink thermal resistance is 0.483 °C/W, and it operates over a junction temperature range of -55 °C to 175 °C. The device is RoHS compliant.