IGBT Module|•MOS input (voltage controlled)|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives on mains 575 - 750 VAC|•DC bus voltage 750 - 1200 VDC|•Public transport (auxiliary syst.)|•Switching (not for linear use)
| Richardson RFPD | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SKM200GAL173D |
| Product Name | Power IGBT Transistor |
