Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120TAM11CTPAG

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High power and efficient converters and inverters Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for power and signal, for easy PCB mounting Low profile RoHS compliant Applications Uninterruptible power supplies Switched Mode power supplies EV motor and traction drive Welding converters
  • Silicon Carbide MOSFET Modules - MSCSM120TAM11CTPAG - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120TAM11CTPAG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High power and efficient converters and inverters Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for power and signal, for easy PCB mounting Low profile RoHS compliant Applications Uninterruptible power supplies Switched Mode power supplies EV motor and traction drive Welding converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM120TAM11CTPAG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120TAM11CTPAG
Silicon Carbide MOSFET Modules MSCSM120TAM11CTPAG
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High power and efficient converters and inverters Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for power and signal, for easy PCB mounting Low profile RoHS compliant Applications Uninterruptible power supplies Switched Mode power supplies EV motor and traction drive Welding converters

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

  • High power and efficient converters and inverters
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals for power and signal, for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • Uninterruptible power supplies
  • Switched Mode power supplies
  • EV motor and traction drive
  • Welding converters
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120TAM11CTPAG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120TAM11CTPAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120TAM11CTPAG
SIC 6N-CH 1200V 251A SP6-P

SIC 6N-CH 1200V 251A SP6-P

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120TAM11CTPAG MSCSM120TAM11CTPAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6P
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