Semikron, Inc. Power IGBT Transistor SKM400GB125D

Description
Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz
  • Power IGBT Transistor - SKM400GB125D - Richardson RFPD
    Richardson RFPD
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Description
Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz
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Suppliers

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Product
Description
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Power IGBT Transistor - SKM400GB125D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM400GB125D
Power IGBT Transistor SKM400GB125D
Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz

Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switched mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz

Supplier's Site Datasheet
Utmel Electronic Limited
Hong Kong, China
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
4425-SKM400GB125D
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7 4425-SKM400GB125D
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7

Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7

Supplier's Site

Technical Specifications

  Richardson RFPD Utmel Electronic Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Bipolar RF Transistors
Product Number SKM400GB125D 4425-SKM400GB125D
Product Name Power IGBT Transistor Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
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