Microchip Technology, Inc. FET, MOSFET Arrays MSCSM120TAM31CT3AG

Description
Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 89A (Tc) 395W (Tc) Chassis Mount SP3F
  • FET, MOSFET Arrays - 150-MSCSM120TAM31CT3AG-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFET Modules - MSCSM120TAM31CT3AG - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120TAM31CT3AG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 89A (Tc) 395W (Tc) Chassis Mount SP3F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 150-MSCSM120TAM31CT3AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM120TAM31CT3AG-ND
FET, MOSFET Arrays 150-MSCSM120TAM31CT3AG-ND
Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 89A (Tc) 395W (Tc) Chassis Mount SP3F

Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 89A (Tc) 395W (Tc) Chassis Mount SP3F

Buy Now Datasheet
Silicon Carbide MOSFET Modules - MSCSM120TAM31CT3AG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120TAM31CT3AG
Silicon Carbide MOSFET Modules MSCSM120TAM31CT3AG
Features SiC Power MOSFET High Speed Switching Ultra low loss Low RDS(on) Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Uninterruptible power supplies Switched mode power supplies EV motor and traction drive Welding converters

Features

  • SiC Power MOSFET
    • High Speed Switching
    • Ultra low loss
    • Low RDS(on)
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Very Low stray inductance
  • Kelvin source for easy drive
  • Internal thermistor for temperature monitoring
  • Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

  • High efficiency converter
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • Uninterruptible power supplies
  • Switched mode power supplies
  • EV motor and traction drive
  • Welding converters
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120TAM31CT3AG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120TAM31CT3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120TAM31CT3AG
SIC 6N-CH 1200V 89A SP3F

SIC 6N-CH 1200V 89A SP3F

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 150-MSCSM120TAM31CT3AG-ND MSCSM120TAM31CT3AG MSCSM120TAM31CT3AG
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Module SP3F
Unlock Full Specs
to access all available technical data