Semikron, Inc. Power IGBT Transistor SKM150GB063D

Description
Superfast NPT-IGBT Modules Features N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp. coeff. of Vce(sat) 50 % less turn off loses 30 % less short circuit current Very low Cies, Coes, Cres Latch-up free Fast & soft inverse CAL diodes Isolated copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications Switching (not for linear use) Switched mode power supplies UPS AC inverter servo drives Pulse frequencies also above 10 kHz Welding inverters Items are in stock and available for delivery within one week of order
  • Power IGBT Transistor - SKM150GB063D - Richardson RFPD
    Richardson RFPD
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Description
Superfast NPT-IGBT Modules Features N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp. coeff. of Vce(sat) 50 % less turn off loses 30 % less short circuit current Very low Cies, Coes, Cres Latch-up free Fast & soft inverse CAL diodes Isolated copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications Switching (not for linear use) Switched mode power supplies UPS AC inverter servo drives Pulse frequencies also above 10 kHz Welding inverters Items are in stock and available for delivery within one week of order
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Datasheet
Datasheet Summary
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SKM150GB063D is a Superfast NPT-IGBT module in a SEMITRANS 3 package with dimensions of 108 mm × 52 mm × 25 mm. It features a 600 V blocking voltage, a 150 A rated collector current, and very low switching losses. The module includes fast, soft-recovery inverse CAL diodes, latch-up-free operation, and high thermal stability. It meets UL 94 V-0 flammability standards and is recognized under UL file number E63532. The device is electrostatic discharge sensitive per IEC 60747-1 and is intended for switching applications such as inverters, UPS systems, and welding equipment.

Datasheet Summary
Powered by GS/AI

SKM150GB063D is a Superfast NPT-IGBT module in a SEMITRANS 3 package with dimensions of 108 mm × 52 mm × 25 mm. It features a 600 V blocking voltage, a 150 A rated collector current, and very low switching losses. The module includes fast, soft-recovery inverse CAL diodes, latch-up-free operation, and high thermal stability. It meets UL 94 V-0 flammability standards and is recognized under UL file number E63532. The device is electrostatic discharge sensitive per IEC 60747-1 and is intended for switching applications such as inverters, UPS systems, and welding equipment.

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Power IGBT Transistor - SKM150GB063D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM150GB063D
Power IGBT Transistor SKM150GB063D
Superfast NPT-IGBT Modules Features N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp. coeff. of Vce(sat) 50 % less turn off loses 30 % less short circuit current Very low Cies, Coes, Cres Latch-up free Fast & soft inverse CAL diodes Isolated copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications Switching (not for linear use) Switched mode power supplies UPS AC inverter servo drives Pulse frequencies also above 10 kHz Welding inverters Items are in stock and available for delivery within one week of order

Superfast NPT-IGBT Modules

Features

  • N channel, homogeneous Silicon structure (NPT-Non Punch-Through IGBT)
  • Low tail current with low temperature dependence
  • High short circuit capability, self limiting if term. G is clamped to E
  • Pos. temp. coeff. of Vce(sat)
  • 50 % less turn off loses
  • 30 % less short circuit current
  • Very low Cies, Coes, Cres
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper Bonding Technology without hard mould
  • Large clearance (10 mm) and creepage distances (20 mm)

Typical Applications

  • Switching (not for linear use)
  • Switched mode power supplies
  • UPS
  • AC inverter servo drives
  • Pulse frequencies also above 10 kHz
  • Welding inverters

Items are in stock and available for delivery within one week of order

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM150GB063D
Product Name Power IGBT Transistor
Package Type Semitrans 3
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