Microchip Technology, Inc. FET, MOSFET Arrays MSCSM170TLM45C3AG

Description
Mosfet Array 4 N-Channel (Three Level Inverter) 1700V (1.7kV) 64A (Tc) 319W (Tc) Chassis Mount SP3F
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Description
Mosfet Array 4 N-Channel (Three Level Inverter) 1700V (1.7kV) 64A (Tc) 319W (Tc) Chassis Mount SP3F
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - 150-MSCSM170TLM45C3AG-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM170TLM45C3AG-ND
FET, MOSFET Arrays 150-MSCSM170TLM45C3AG-ND
Mosfet Array 4 N-Channel (Three Level Inverter) 1700V (1.7kV) 64A (Tc) 319W (Tc) Chassis Mount SP3F

Mosfet Array 4 N-Channel (Three Level Inverter) 1700V (1.7kV) 64A (Tc) 319W (Tc) Chassis Mount SP3F

Buy Now Datasheet
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM170TLM45C3AG
Silicon Carbide MOSFET Modules MSCSM170TLM45C3AG
The MSCSM170TLM45C3AG device is a three level inverter 1700V/64A silicon carbide (SiC) MOSFET power module Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Solderable terminals both for power and signal for easy PCB mounting Applications Uninterruptible power supplies

The MSCSM170TLM45C3AG device is a three level inverter 1700V/64A silicon carbide (SiC) MOSFET power module

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant
  • Solderable terminals both for power and signal for easy PCB mounting

Applications

  • Uninterruptible power supplies
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM170TLM45C3AG - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM170TLM45C3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM170TLM45C3AG
SIC 4N-CH 1700V 64A SP3F

SIC 4N-CH 1700V 64A SP3F

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 150-MSCSM170TLM45C3AG-ND MSCSM170TLM45C3AG MSCSM170TLM45C3AG
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Module SP3F Module
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