Semikron, Inc. Power IGBT Transistor SKM200GB125D

Description
Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distance (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz
  • Power IGBT Transistor - SKM200GB125D - Richardson RFPD
    Richardson RFPD
  • Igbt Array & Module Transistor, Dual N Channel, 200 A, 3.3 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3194 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distance (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Power IGBT Transistor - SKM200GB125D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM200GB125D
Power IGBT Transistor SKM200GB125D
Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distance (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz

Ultra Fast IGBT Module|•N channel, homogeneous Si|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (13 mm) and creepage distance (20 mm)|Typical Applications:|•Switched mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•Electronic welders at fsw > 20 kHz

Supplier's Site Datasheet
Igbt Array & Module Transistor, Dual N Channel, 200 A, 3.3 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3194 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Array & Module Transistor, Dual N Channel, 200 A, 3.3 V, 1.2 Kv, Module Rohs Compliant Semikron
55X3194
Igbt Array & Module Transistor, Dual N Channel, 200 A, 3.3 V, 1.2 Kv, Module Rohs Compliant Semikron 55X3194
IGBT Array & Module Transistor, Dual N Channel, 200 A, 3.3 V, 1.2 kV, Module RoHS Compliant: Yes

IGBT Array & Module Transistor, Dual N Channel, 200 A, 3.3 V, 1.2 kV, Module RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM200GB125D 55X3194
Product Name Power IGBT Transistor Igbt Array & Module Transistor, Dual N Channel, 200 A, 3.3 V, 1.2 Kv, Module Rohs Compliant Semikron
Package Type Semitrans 3 TO-3
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