Semikron, Inc. Power IGBT Transistor SKM195GB066D

Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders
  • Power IGBT Transistor - SKM195GB066D - Richardson RFPD
    Richardson RFPD
  • Igbt Array & Module Transistor, Dual N Channel, 265 A, 1.45 V, 600 V, Module Rohs Compliant Semikron - 55X3190 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM195GB066D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM195GB066D
Power IGBT Transistor SKM195GB066D
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders

Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electronic welders

Supplier's Site Datasheet
Igbt Array & Module Transistor, Dual N Channel, 265 A, 1.45 V, 600 V, Module Rohs Compliant Semikron - 55X3190 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Array & Module Transistor, Dual N Channel, 265 A, 1.45 V, 600 V, Module Rohs Compliant Semikron
55X3190
Igbt Array & Module Transistor, Dual N Channel, 265 A, 1.45 V, 600 V, Module Rohs Compliant Semikron 55X3190
IGBT Array & Module Transistor, Dual N Channel, 265 A, 1.45 V, 600 V, Module RoHS Compliant: Yes

IGBT Array & Module Transistor, Dual N Channel, 265 A, 1.45 V, 600 V, Module RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM195GB066D 55X3190
Product Name Power IGBT Transistor Igbt Array & Module Transistor, Dual N Channel, 265 A, 1.45 V, 600 V, Module Rohs Compliant Semikron
Polarity N-Channel
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