Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120DUM16T3AG

Description
The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications AC switches
Request a Quote Datasheet
Description
The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications AC switches
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120DUM16T3AG
Silicon Carbide MOSFET Modules MSCSM120DUM16T3AG
The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications AC switches

The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module.

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • Kelvin source for easy drive
  • Low stray inductance
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
  • Internal thermistor for temperature monitoring

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • AC switches
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM120DUM16T3AG-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM120DUM16T3AG-ND
FET, MOSFET Arrays 150-MSCSM120DUM16T3AG-ND
Mosfet Array 2 N-Channel (Dual) Common Source 1200V (1.2kV) 173A (Tc) 745W (Tc) Chassis Mount SP3F

Mosfet Array 2 N-Channel (Dual) Common Source 1200V (1.2kV) 173A (Tc) 745W (Tc) Chassis Mount SP3F

Buy Now Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120DUM16T3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120DUM16T3AG
SIC 2N-CH 1200V 173A SP3F

SIC 2N-CH 1200V 173A SP3F

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM120DUM16T3AG 150-MSCSM120DUM16T3AG-ND MSCSM120DUM16T3AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP3F Module Module
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