Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM170AM058CT6AG

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM170AM058CT6AG
Silicon Carbide MOSFET Modules MSCSM170AM058CT6AG
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature independent switching behavior
    • Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • Internal thermistor for temperature monitoring
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • High efficiency converter
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-heatsink thermal resistance
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM170AM058CT6AG-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM170AM058CT6AG-ND
FET, MOSFET Arrays 150-MSCSM170AM058CT6AG-ND
MOSFET 2N-CH 1700V 353A

MOSFET 2N-CH 1700V 353A

Buy Now Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM170AM058CT6AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM170AM058CT6AG
SIC 2N-CH 1700V 353A

SIC 2N-CH 1700V 353A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM170AM058CT6AG 150-MSCSM170AM058CT6AG-ND MSCSM170AM058CT6AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C Module
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