IGBT Module|•Round main terminals|•Easy drilling of PCB|•Input diodes glass passivated|•1400 V PIV, good for 500 VAC|•High I²t rating (inrush current)|•IGBT is latch-up free, homogeneous NPT silicon-structure|•H
igh short circuit capability, self limiting to 6 x Icnom|•Fast & soft CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (9 mm) and creepage distances (13 mm)|Typical Applications:|•Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D
IGBT Module|•Round main terminals|•Easy drilling of PCB|•Input diodes glass passivated|•1400 V PIV, good for 500 VAC|•High I²t rating (inrush current)|•IGBT is latch-up free, homogeneous NPT silicon-structure|•High short circuit capability, self limiting to 6 x Icnom|•Fast & soft CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (9 mm) and creepage distances (13 mm)|Typical Applications:|•Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D
