The SKD75GAL123D is a sixpack modified IGBT module with an integrated B6U input rectifier and brake chopper for PWM inverter drives. It features an isolated copper baseplate with DCB technology, round main terminals, and glass passivated diodes. The module has a 1200 V collector-emitter voltage rating and continuous collector current of 75 A at 25°C, with a peak current of 150 A for 1 ms. IGBT saturation voltage is 2.5 V at 50 A and 25°C rising to 3.0 V at 125°C. Diodes have a 1400 V peak inverse voltage and 600 A²s I²t rating. Thermal resistance is 0.32°C/W for the IGBT and 1.0°C/W for diodes. Clearance is 9 mm, creepage distance is 13 mm, and mounting requires M5 screws with 4-5 Nm torque. It meets UL 94 V-0 and is certified under UL File E63532.
IGBT Module|•Round main terminals|•Easy drilling of PCB|•Input diodes glass passivated|•1400 V PIV, good for 500 VAC|•High I²t rating (inrush current)|•IGBT is latch-up free, homogeneous NPT silicon-structure|•H
| Richardson RFPD | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SKD75GAL123D |
| Product Name | Power IGBT Transistor |
| Package Type | SEMITRANS |
