Semikron, Inc. Power IGBT Transistor SKM200GB063D

Description
Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters
  • Power IGBT Transistor - SKM200GB063D - Richardson RFPD
    Richardson RFPD
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Description
Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters
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Suppliers

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Power IGBT Transistor - SKM200GB063D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM200GB063D
Power IGBT Transistor SKM200GB063D
Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters

Superfast NPT-IGBT Module|•N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switched mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters

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Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM200GB063D
Product Name Power IGBT Transistor
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