Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120DUM31TBL1NG

Description
Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS compliant Applications High reliability power systems AC Switches
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS compliant Applications High reliability power systems AC Switches
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM120DUM31TBL1NG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120DUM31TBL1NG
Silicon Carbide MOSFET Modules MSCSM120DUM31TBL1NG
Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS compliant Applications High reliability power systems AC Switches

Features

  • SiC Power MOSFET: Low RDS(on), High speed switching
  • Kelvin source for easy drive
  • Ultra-low weight and profile
  • Si3N4 substrate with thick copper for improved thermal performance
  • Internal thermistor for temperature monitoring
  • Extended temperature range

Benefits

  • High-efficiency converter
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very integrated power conversion system
  • Low profile
  • RoHS compliant

Applications

  • High reliability power systems
  • AC Switches
Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120DUM31TBL1NG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120DUM31TBL1NG
SIC 2N-CH 1200V 79A

SIC 2N-CH 1200V 79A

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120DUM31TBL1NG MSCSM120DUM31TBL1NG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type BL1 Module
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