Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70DUM07T3AG

Description
The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Solderable terminals both for power and signal for easy PCB mounting Applications AC switches
  • FET, MOSFET Arrays - 150-MSCSM70DUM07T3AG-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Solderable terminals both for power and signal for easy PCB mounting Applications AC switches
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM70DUM07T3AG
Silicon Carbide MOSFET Modules MSCSM70DUM07T3AG
The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Solderable terminals both for power and signal for easy PCB mounting Applications AC switches

The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module.

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • Kelvin source for easy drive
  • Low stray inductance
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
  • Internal thermistor for temperature monitoring

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant
  • Solderable terminals both for power and signal for easy PCB mounting

Applications

  • AC switches
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM70DUM07T3AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM70DUM07T3AG-ND
FET, MOSFET Arrays 150-MSCSM70DUM07T3AG-ND
Mosfet Array 2 N-Channel (Dual) Common Source 700V 353A (Tc) 988W (Tc) Chassis Mount SP3F

Mosfet Array 2 N-Channel (Dual) Common Source 700V 353A (Tc) 988W (Tc) Chassis Mount SP3F

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM70DUM07T3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM70DUM07T3AG
SIC 2N-CH 700V 353A SP3F

SIC 2N-CH 700V 353A SP3F

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM70DUM07T3AG 150-MSCSM70DUM07T3AG-ND MSCSM70DUM07T3AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP3F Module
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