The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.
| DigiKey | Richardson RFPD | |
|---|---|---|
| Product Category | Transistors | RF Transistors |
| Product Number | 1465-1421-ND | NPT2018 |
| Product Name | RF FETs, MOSFETs | RF Power Transistor |
| Package Type | 14-TDFN Exposed Pad | Plastic SMT |
