The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.
| Richardson RFPD | DigiKey | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | NPT2018 | 1465-1421-ND |
| Product Name | RF Power Transistor | RF FETs, MOSFETs |
| Transistor Technology / Material | GaN |
