MACOM RF FETs, MOSFETs NPT2018

Description
FET RF 160V 6GHZ 14DFN
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Description
FET RF 160V 6GHZ 14DFN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 1465-1421-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-1421-ND
RF FETs, MOSFETs 1465-1421-ND
FET RF 160V 6GHZ 14DFN

FET RF 160V 6GHZ 14DFN

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RF Power Transistor - NPT2018 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
NPT2018
RF Power Transistor NPT2018
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.

Supplier's Site Datasheet

Technical Specifications

  DigiKey Richardson RFPD
Product Category Transistors RF Transistors
Product Number 1465-1421-ND NPT2018
Product Name RF FETs, MOSFETs RF Power Transistor
Package Type 14-TDFN Exposed Pad Plastic SMT
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