MACOM RF Power Transistor NPT2018

Description
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.
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Description
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - NPT2018 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
NPT2018
RF Power Transistor NPT2018
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W (41 dBm) in an industry standard surface mount plastic package.

Supplier's Site Datasheet
RF FETs, MOSFETs - 1465-1421-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-1421-ND
RF FETs, MOSFETs 1465-1421-ND
FET RF 160V 6GHZ 14DFN

FET RF 160V 6GHZ 14DFN

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Technical Specifications

  Richardson RFPD DigiKey
Product Category RF Transistors Transistors
Product Number NPT2018 1465-1421-ND
Product Name RF Power Transistor RF FETs, MOSFETs
Transistor Technology / Material GaN
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