Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Aluminum Nitride (AlN) substrate for improved thermal performance
M5 power connectors
Benefits
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
Richardson RFPD
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Datasheet
Description
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Aluminum Nitride (AlN) substrate for improved thermal performance
M5 power connectors
Benefits
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Aluminum Nitride (AlN) substrate for improved thermal performance
M5 power connectors
Benefits
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Aluminum Nitride (AlN) substrate for improved thermal performance
M5 power connectors
Benefits
High efficiency converter
Outstanding performance at high frequency operation