Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70XM45CTYZBNMG

Description
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
Request a Quote Datasheet
Description
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM70XM45CTYZBNMG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM70XM45CTYZBNMG
Silicon Carbide MOSFET Modules MSCSM70XM45CTYZBNMG
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)

Features

  • SiC Schottky Diode
  • SiC MOSFET
  • Low stray inductance
  • Lead frames for power connections
  • SI3N4 substrate for improved thermal performance
  • AlSiC base plate for extended reliability and reduced weight
  • Extended storage temperature range
  • Internal thermistor for temperature monitoring

Benefits

  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
  • High reliability Power Core Module (PCM)
  • Modular power module for Power Drive Electronic (PDE)
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSCSM70XM45CTYZBNMG
Product Name Silicon Carbide MOSFET Modules
Package Type HPD
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