Features
SiC Schottky Diode
SiC MOSFET
Low stray inductance
Lead frames for power connections
SI3N4 substrate for improved thermal performance
AlSiC base plate for extended reliability and reduced weight
Extended storage temperature range
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
High reliability Power Core Module (PCM)
Modular power module for Power Drive Electronic (PDE)
Richardson RFPD
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Description
Features
SiC Schottky Diode
SiC MOSFET
Low stray inductance
Lead frames for power connections
SI3N4 substrate for improved thermal performance
AlSiC base plate for extended reliability and reduced weight
Extended storage temperature range
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
High reliability Power Core Module (PCM)
Modular power module for Power Drive Electronic (PDE)
Request a Quote
Email Supplier
Datasheet
Datasheet Summary Powered by GS/AI
The MSCSM70XM45CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module using silicon carbide (SiC) MOSFETs and Schottky diodes for high-reliability actuator and power drive applications. It features an AlSiC base plate, Si₃N₄ substrate, internal thermistor, and solderable terminals with direct heatsink mounting. The module weighs 150 g and is RoHS compliant. The three-phase bridge SiC MOSFETs have a 700 V drain-source rating and 52 A continuous current at 25 °C, while the soft start MOSFET supports 110 A continuous current. IGBTs in the solenoid section have a 1200 V collector-emitter voltage rating. Junction-to-case thermal resistance is 1.06 °C/W for the bridge MOSFETs, 0.513 °C/W for the soft start MOSFET, and 1.85 °C/W for the IGBTs. Operating junction temperature ranges from -55 °C to 175 °C with a storage range of -60 °C to 125 °C and 4000 V RMS isolation voltage between terminals and case.
Datasheet Summary Powered by GS/AI
The MSCSM70XM45CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module using silicon carbide (SiC) MOSFETs and Schottky diodes for high-reliability actuator and power drive applications. It features an AlSiC base plate, Si₃N₄ substrate, internal thermistor, and solderable terminals with direct heatsink mounting. The module weighs 150 g and is RoHS compliant. The three-phase bridge SiC MOSFETs have a 700 V drain-source rating and 52 A continuous current at 25 °C, while the soft start MOSFET supports 110 A continuous current. IGBTs in the solenoid section have a 1200 V collector-emitter voltage rating. Junction-to-case thermal resistance is 1.06 °C/W for the bridge MOSFETs, 0.513 °C/W for the soft start MOSFET, and 1.85 °C/W for the IGBTs. Operating junction temperature ranges from -55 °C to 175 °C with a storage range of -60 °C to 125 °C and 4000 V RMS isolation voltage between terminals and case.
Features
SiC Schottky Diode
SiC MOSFET
Low stray inductance
Lead frames for power connections
SI3N4 substrate for improved thermal performance
AlSiC base plate for extended reliability and reduced weight
Extended storage temperature range
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
High reliability Power Core Module (PCM)
Modular power module for Power Drive Electronic (PDE)
Features
SiC Schottky Diode
SiC MOSFET
Low stray inductance
Lead frames for power connections
SI3N4 substrate for improved thermal performance
AlSiC base plate for extended reliability and reduced weight
Extended storage temperature range
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
Applications
Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
High reliability Power Core Module (PCM)
Modular power module for Power Drive Electronic (PDE)
