IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532
TRANSISTOR; DC Collector Current:612A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage V(br)ceo:1.2kV; Product Range:- RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes
| Richardson RFPD | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SKM400GB12V | 77R2586 | 55X3199 |
| Product Name | Power IGBT Transistor | Transistor; Dc Collector Current Semikron | Igbt Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 Kv, Module Rohs Compliant Semikron |
| Transistor Type | Transistor; Dc Collector Current Semikron |
