Semikron, Inc. Power IGBT Transistor SKM400GB12V

Description
IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532
  • Power IGBT Transistor - SKM400GB12V - Richardson RFPD
    Richardson RFPD
  • Transistor; Dc Collector Current Semikron - 77R2586 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Igbt Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3199 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM400GB12V - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM400GB12V
Power IGBT Transistor SKM400GB12V
IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532

IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532

Supplier's Site Datasheet
Transistor; Dc Collector Current Semikron - 77R2586 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor; Dc Collector Current Semikron
77R2586
Transistor; Dc Collector Current Semikron 77R2586
TRANSISTOR; DC Collector Current:612A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage V(br)ceo:1.2kV; Product Range:- RoHS Compliant: Yes

TRANSISTOR; DC Collector Current:612A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage V(br)ceo:1.2kV; Product Range:- RoHS Compliant: Yes

Supplier's Site
Igbt Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3199 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 Kv, Module Rohs Compliant Semikron
55X3199
Igbt Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 Kv, Module Rohs Compliant Semikron 55X3199
IGBT Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes

IGBT Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD Newark, An Avnet Company Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM400GB12V 77R2586 55X3199
Product Name Power IGBT Transistor Transistor; Dc Collector Current Semikron Igbt Array & Module Transistor, Dual N Channel, 612 A, 1.75 V, 1.2 Kv, Module Rohs Compliant Semikron
Transistor Type Transistor; Dc Collector Current Semikron
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