RF Mosfet HEMT 28V 350mA 0Hz ~ 4GHz 13dB 37dBm 8-SOIC-EP
Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF MOSFET HEMT 28V 8SOIC
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-1413-ND | NPT1004D | NPT1004D |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" | Plastic SMT | 8-SOIC-EP |
| Transistor Technology / Material | GaN | ||
| Power Gain | 13.5 dB |
