Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120HM31TBL2NG

Description
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS compliant Applications High reliability power systems High efficiency AC/DC and DC/AC converters Motor control
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS compliant Applications High reliability power systems High efficiency AC/DC and DC/AC converters Motor control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120HM31TBL2NG
Silicon Carbide MOSFET Modules MSCSM120HM31TBL2NG
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Low profile RoHS compliant Applications High reliability power systems High efficiency AC/DC and DC/AC converters Motor control

Features

  • SiC Power MOSFET: Low RDS(on), High speed switching
  • Very low stray inductance
  • Ultra-low weight and profile
  • Kelvin source for easy drive
  • Si3N4 substrate with thick copper for improved thermal performance
  • Internal thermistor for temperature monitoring
  • Extended temperature range

Benefits

  • High-efficiency converter
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Very integrated power conversion system
  • Low profile
  • RoHS compliant

Applications

  • High reliability power systems
  • High efficiency AC/DC and DC/AC converters
  • Motor control
Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120HM31TBL2NG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120HM31TBL2NG
SIC 4N-CH 1200V 79A

SIC 4N-CH 1200V 79A

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120HM31TBL2NG MSCSM120HM31TBL2NG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type BL2 Module
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