Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120HM083AG

Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Uninterruptible power supplies Switched mode power supplies EV motor and traction drive Welding converters
  • Silicon Carbide MOSFET Modules - MSCSM120HM083AG - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 150-MSCSM120HM083AG-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Uninterruptible power supplies Switched mode power supplies EV motor and traction drive Welding converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM120HM083AG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120HM083AG
Silicon Carbide MOSFET Modules MSCSM120HM083AG
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Uninterruptible power supplies Switched mode power supplies EV motor and traction drive Welding converters

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • Low stray inductance
  • Kelvin source for easy drive
  • M5 power connectors
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • High-efficiency converter
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Uninterruptible power supplies
  • Switched mode power supplies
  • EV motor and traction drive
  • Welding converters
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM120HM083AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM120HM083AG-ND
FET, MOSFET Arrays 150-MSCSM120HM083AG-ND
MOSFET 4N-CH 1200V 251A

MOSFET 4N-CH 1200V 251A

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120HM083AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120HM083AG
SIC 4N-CH 1200V 251A

SIC 4N-CH 1200V 251A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM120HM083AG 150-MSCSM120HM083AG-ND MSCSM120HM083AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C Module
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