Split Dual Si/SiC Hybrid IGBT Module. Powerex IGBT Modules are designed for use in high frequency applications; upwards of 30 kHz for hard switching applications and 80 kHz for soft switching applications. Each module consists of two IGBT Transistors with each transistor having a reverse connected super-fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
IGBT MODULE 1200V 100A 730W
| Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | QID1210007 | QID1210007 |
| Product Name | Silicon Carbide/Silicon Hybrid Modules | Discrete Semiconductor Products - Transistors - IGBTs |
| Transistor Technology / Material | Silicon Carbide |
