Mitsubishi Electric & Electronics USA, Inc. Power IPM Transistor PS21A7A

Description
Intellimod Module, Dual-In-Line Intelligent Power Module. DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feedback. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.
  • Power IPM Transistor - PS21A7A - Richardson RFPD
    Richardson RFPD
  • Igbt Module, 600V, 75A, Dip; Continuous Collector Current Mitsubishi Electric - 10N9758 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Intellimod Module, Dual-In-Line Intelligent Power Module. DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feedback. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.
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Suppliers

Company
Product
Description
Supplier Links
Power IPM Transistor - PS21A7A - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IPM Transistor
PS21A7A
Power IPM Transistor PS21A7A
Intellimod Module, Dual-In-Line Intelligent Power Module. DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feedback. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.

Intellimod Module, Dual-In-Line Intelligent Power Module. DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feedback. Overall efficiency and reliability are increased by the use of full gate CSTBT technology and low thermal impedance.

Supplier's Site Datasheet
Igbt Module, 600V, 75A, Dip; Continuous Collector Current Mitsubishi Electric - 10N9758 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 600V, 75A, Dip; Continuous Collector Current Mitsubishi Electric
10N9758
Igbt Module, 600V, 75A, Dip; Continuous Collector Current Mitsubishi Electric 10N9758
IGBT MODULE, 600V, 75A, DIP; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:600V; Power Dissipation:162W; Operating Temperature Max:100°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

IGBT MODULE, 600V, 75A, DIP; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:600V; Power Dissipation:162W; Operating Temperature Max:100°C; IGBT Termination:Solder; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number PS21A7A 10N9758
Product Name Power IPM Transistor Igbt Module, 600V, 75A, Dip; Continuous Collector Current Mitsubishi Electric
Transistor Type Power IPM Transistor
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