Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN120N60A3D1 IXGN120N60A3D1

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGN120N60A3D1 is a 600 V punch-through IGBT in a SOT-227B miniBLOC package, rated for a continuous collector current of 120 A at 110 °C and a peak collector current of 200 A at 25 °C. It features a low saturated collector-emitter voltage of 1.35 V maximum at 100 A and 15 V gate drive, and includes an anti-parallel ultra-fast diode with a forward voltage of 2.1 V at 60 A. The device supports clamped inductive switching with a square RBSOA and operates at frequencies up to 5 kHz. It has an isolation voltage of 3000 V~ and uses aluminum nitride isolation. Thermal resistance junction-to-case is 0.21 °C/W. The part meets UL 94 V-0 and is certified to AEC-Q200. Applications include power inverters, UPS, motor drives, SMPS, PFC circuits, and welding machines.

Datasheet Summary
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The IXGN120N60A3D1 is a 600 V punch-through IGBT in a SOT-227B miniBLOC package, rated for a continuous collector current of 120 A at 110 °C and a peak collector current of 200 A at 25 °C. It features a low saturated collector-emitter voltage of 1.35 V maximum at 100 A and 15 V gate drive, and includes an anti-parallel ultra-fast diode with a forward voltage of 2.1 V at 60 A. The device supports clamped inductive switching with a square RBSOA and operates at frequencies up to 5 kHz. It has an isolation voltage of 3000 V~ and uses aluminum nitride isolation. Thermal resistance junction-to-case is 0.21 °C/W. The part meets UL 94 V-0 and is certified to AEC-Q200. Applications include power inverters, UPS, motor drives, SMPS, PFC circuits, and welding machines.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN120N60A3D1 - IXGN120N60A3D1 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN120N60A3D1
IXGN120N60A3D1
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN120N60A3D1 IXGN120N60A3D1
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGN120N60A3D1
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN120N60A3D1
VCES 600 volts
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