Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH56N60A3 IXGH56N60A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGH56N60A3 is a 600V punch-through IGBT designed for switching applications up to 5 kHz, such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247 case and weighs 6 g. The device has a continuous collector current rating of 56 A at 110°C and a peak collector current of 370 A for 1 ms. The collector-emitter saturation voltage is 1.35 V maximum at 44 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.375 °C/W. The junction temperature range is -55 °C to 150 °C, with a storage temperature range of -40 °C to 150 °C. It features low gate drive requirements and high power density.

Datasheet Summary
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The IXGH56N60A3 is a 600V punch-through IGBT designed for switching applications up to 5 kHz, such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-247 case and weighs 6 g. The device has a continuous collector current rating of 56 A at 110°C and a peak collector current of 370 A for 1 ms. The collector-emitter saturation voltage is 1.35 V maximum at 44 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.375 °C/W. The junction temperature range is -55 °C to 150 °C, with a storage temperature range of -40 °C to 150 °C. It features low gate drive requirements and high power density.

Suppliers

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Supplier Links
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH56N60A3 - IXGH56N60A3 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH56N60A3
IXGH56N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH56N60A3 IXGH56N60A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH56N60A3
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH56N60A3
VCES 600 volts
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