Littelfuse, Inc. 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGP20N120A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
  • 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGP20N120A3 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current Ixys Semiconductor - 83R9979 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGP20N120A3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
IXGP20N120A3
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGP20N120A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet
Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current Ixys Semiconductor - 83R9979 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current Ixys Semiconductor
83R9979
Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current Ixys Semiconductor 83R9979
GENX3 IGBT, 1200V, 40A, TO-220AB; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:180W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

GENX3 IGBT, 1200V, 40A, TO-220AB; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:180W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGP20N120A3 83R9979
Product Name 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current Ixys Semiconductor
VCES 1200 volts
VCE(on) 2.5 volts
IC(max) 40 amps
Package Type TO-220; TO-220 TO-3; TO-220
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