Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGT64N60A3 IXGT64N60A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGT64N60A3 is a 600V, 64A punch-through IGBT in a TO-268 surface-mount package, designed for low conduction losses and square reverse-bias safe operating area in applications such as power inverters, motor drives, and PFC circuits. It features a maximum collector-emitter saturation voltage of 1.35V at 50A and 15V gate-emitter voltage. The device supports a maximum junction temperature of 150°C, with thermal resistance from junction to case of 0.27°C/W and case to sink of 0.25°C/W. It is rated for continuous collector current up to 64A at 110°C and peak collector current of 400A at 25°C for 1ms. The TO-268 package dimensions are 21.46mm x 16.26mm x 5.72mm.

Datasheet Summary
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The IXGT64N60A3 is a 600V, 64A punch-through IGBT in a TO-268 surface-mount package, designed for low conduction losses and square reverse-bias safe operating area in applications such as power inverters, motor drives, and PFC circuits. It features a maximum collector-emitter saturation voltage of 1.35V at 50A and 15V gate-emitter voltage. The device supports a maximum junction temperature of 150°C, with thermal resistance from junction to case of 0.27°C/W and case to sink of 0.25°C/W. It is rated for continuous collector current up to 64A at 110°C and peak collector current of 400A at 25°C for 1ms. The TO-268 package dimensions are 21.46mm x 16.26mm x 5.72mm.

Suppliers

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Product
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Supplier Links
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGT64N60A3 - IXGT64N60A3 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGT64N60A3
IXGT64N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGT64N60A3 IXGT64N60A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGT64N60A3
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGT64N60A3
VCES 600 volts
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