Littelfuse, Inc. 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGA20N100A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGA20N100A3 is a 1000 V, 20 A punch-through IGBT in a TO-263 surface-mount package, designed for switching applications up to 3 kHz in power inverters, motor drives, and PFC circuits. It has a maximum collector-emitter voltage of 1000 V, a collector current of 20 A at 90 °C, and a saturation voltage of 2.1 to 2.3 V at 20 A and 15 V gate drive. The device features a thermal resistance from junction to case of 0.83 °C/W and operates within a junction temperature range of -55 °C to 150 °C. Its gate-emitter threshold voltage is 2.5 to 5.0 V, and it supports a transient gate-emitter voltage of ±30 V. The TO-263 package weighs 2.5 g and requires a mounting force of 10 to 65 N.

Datasheet Summary
Powered by GS/AI

The IXGA20N100A3 is a 1000 V, 20 A punch-through IGBT in a TO-263 surface-mount package, designed for switching applications up to 3 kHz in power inverters, motor drives, and PFC circuits. It has a maximum collector-emitter voltage of 1000 V, a collector current of 20 A at 90 °C, and a saturation voltage of 2.1 to 2.3 V at 20 A and 15 V gate drive. The device features a thermal resistance from junction to case of 0.83 °C/W and operates within a junction temperature range of -55 °C to 150 °C. Its gate-emitter threshold voltage is 2.5 to 5.0 V, and it supports a transient gate-emitter voltage of ±30 V. The TO-263 package weighs 2.5 g and requires a mounting force of 10 to 65 N.

Suppliers

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Supplier Links
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGA20N100A3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
IXGA20N100A3
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGA20N100A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGA20N100A3
Product Name 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
VCES 1000 volts
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