![300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs - IXGH30N120B3 - Littelfuse, Inc.](https://partimages.globalspec.com/33/4933/14259933_medium.png)
The IXGH30N120B3 is a 1200V punch-through IGBT in a TO-247 package, designed for high-speed switching applications in the 3-20 kHz range. It handles a continuous collector current of 30 A at 110°C and 60 A at 25°C, with a peak pulse current of 150 A. The device has a typical collector-emitter saturation voltage of 3.0 V at 30 A and 15 V gate-emitter voltage, decreasing to 2.95 V at 125°C junction temperature. It features a square safe operating area, low gate drive requirement, and thermal resistance of 0.21 °C/W from case to sink. Operating junction temperature ranges from -55°C to 150°C. The TO-247 package weighs 6.0 g and complies with international standard packages.
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
Trans IGBT Chip N-CH 1200V 60A 300W 3-Pin(3+Tab) TO-247 Product overview: IXGH30N120B3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 60A, 300W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 60A, 300W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXGH30N120B3 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGH30N120B3 | 279-IXGH30N120B3 |
| Product Name | 300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs | 1200V 60A 300W IGBT Transistor |
| VCES | 1200 volts | |
| VCE(on) | 3.5 volts | |
| IC(max) | 60 amps | |
| Package Type | TO-247; TO-247 |
