Littelfuse, Inc. 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGA20N120

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGA20N120 is an IGBT in a TO-263AA package designed for high-current switching applications such as AC motor speed control, DC servo drives, and uninterruptible power supplies. It has a maximum collector-emitter voltage of 1200 V, a continuous collector current of 40 A at 25°C, and a collector-emitter saturation voltage of 2.5 V at 20 A and 15 V gate-emitter voltage. The device features a MOS gate drive for simple control, with a typical turn-on delay of 380 ns and a thermal resistance from junction to case of 0.83 K/W. It is rated for operation from -55°C to 150°C and meets JEDEC TO-263AA package standards. The part supports clamped inductive switching with a safe operating area up to 40 A at 125°C.

Datasheet Summary
Powered by GS/AI

The IXGA20N120 is an IGBT in a TO-263AA package designed for high-current switching applications such as AC motor speed control, DC servo drives, and uninterruptible power supplies. It has a maximum collector-emitter voltage of 1200 V, a continuous collector current of 40 A at 25°C, and a collector-emitter saturation voltage of 2.5 V at 20 A and 15 V gate-emitter voltage. The device features a MOS gate drive for simple control, with a typical turn-on delay of 380 ns and a thermal resistance from junction to case of 0.83 K/W. It is rated for operation from -55°C to 150°C and meets JEDEC TO-263AA package standards. The part supports clamped inductive switching with a safe operating area up to 40 A at 125°C.

Suppliers

Company
Product
Description
Supplier Links
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGA20N120 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
IXGA20N120
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGA20N120
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGA20N120
Product Name 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
VCES 1200 volts
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