Littelfuse, Inc. 300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs IXGH48N60B3

Description
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
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Description
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
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Datasheet
Datasheet Summary
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The IXGH48N60B3 is a 600V punch-through IGBT in a TO-247 package, designed for medium-speed switching applications from 5 to 40 kHz. It supports a continuous collector current of 48 A at 110°C and a peak collector current of 280 A for 1 ms. The device has a maximum collector-emitter saturation voltage of 1.8 V at 32 A and 15 V gate-emitter bias, with a thermal resistance junction-to-case of 0.42 °C/W. It features a square reverse-bias safe operating area, low gate drive requirements, and is optimized for minimal conduction and switching losses. The part is rated for operation from -55°C to 150°C and meets international standard package specifications. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Datasheet Summary
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The IXGH48N60B3 is a 600V punch-through IGBT in a TO-247 package, designed for medium-speed switching applications from 5 to 40 kHz. It supports a continuous collector current of 48 A at 110°C and a peak collector current of 280 A for 1 ms. The device has a maximum collector-emitter saturation voltage of 1.8 V at 32 A and 15 V gate-emitter bias, with a thermal resistance junction-to-case of 0.42 °C/W. It features a square reverse-bias safe operating area, low gate drive requirements, and is optimized for minimal conduction and switching losses. The part is rated for operation from -55°C to 150°C and meets international standard package specifications. Mounting torque is specified at 1.13 Nm (10 lb.in.).

Suppliers

Company
Product
Description
Supplier Links
300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs - IXGH48N60B3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs
IXGH48N60B3
300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs IXGH48N60B3
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT

GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT

Supplier's Site Datasheet
IGBTs - 7917416 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
7917416
IGBTs 7917416
IGBT 600V 48A GenX3 Low Vsat 40kHz TO247

IGBT 600V 48A GenX3 Low Vsat 40kHz TO247

Supplier's Site
IGBTs - 7917416P - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT 600V 48A GenX3 Low Vsat 40kHz TO247

IGBT 600V 48A GenX3 Low Vsat 40kHz TO247

Supplier's Site
IGBTs - 1461729 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1461729
IGBTs 1461729
IGBT 600V 48A GenX3 Low Vsat 40kHz TO247

IGBT 600V 48A GenX3 Low Vsat 40kHz TO247

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. RS Components, Ltd.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH48N60B3 7917416 7917416P
Product Name 300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs IGBTs IGBTs
VCES 600 volts
VCE(on) 1.8 volts
IC(max) 280 amps
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