IXGT20N140C3H1 is a 1400V, 20A high-speed PT IGBT with an anti-parallel ultra-fast diode, designed for switching applications between 20 and 50 kHz. It is packaged in a TO-268 case measuring 20.80 to 21.46 mm in length, with a thermal resistance from junction to case of 0.9 °C/W. The collector-emitter saturation voltage is 4.0 to 5.0 V at 20 A and 25°C, rising to 3.5 V at 125°C. The device features a square RBSOA, high avalanche capability, and a maximum junction temperature of 150°C. It is rated for continuous gate-emitter voltage of ±20 V and transient gate-emitter voltage of ±30 V. Switching times are 12 ns for turn-on rise and 32 ns for turn-off fall at 25°C. This part is intended for use in high-frequency power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, and welding machines.
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGT20N140C3H1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - PT - Series: High-Frequency - IXGT20N140C3H1 |
| VCES | 1400 volts |
