The IXGR50N90B2D1 is a high-speed IGBT with an integrated fast diode, designed for applications such as AC motor control, DC choppers, and uninterruptible power supplies. It is packaged in an ISOPLUS247 case with an electrically isolated back surface, weighing 5 g. The device has a collector-emitter voltage rating of 900 V and a continuous collector current of 40 A at 25°C, derating to 19 A at 110°C. The typical collector-emitter saturation voltage is 2.9 V at 125°C and 50 A. It features a rugged NPT structure, MOS gate turn-on, and is UL recognized. The thermal resistance from junction to case is 1.25 K/W for the IGBT and 1.1 K/W for the diode. The device operates over a junction temperature range of -55°C to 150°C and meets UL 94 V-0 flammability standards.
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGR50N90B2D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGR50N90B2D1 |
| VCES | 900 volts |
