Littelfuse, Inc. 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGK320N60A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGK320N60A3 is a 600V punch-through IGBT designed for switching applications up to 5kHz, including motor drives, UPS, SMPS, and PFC circuits. It is packaged in a TO-264 case, measuring 21.34mm in length, 16.13mm in width, and 5.21mm in height, with a weight of 10g. The device has a continuous collector current rating of 210A at 110°C and a peak collector current of 700A at 1ms. It features a maximum collector-emitter saturation voltage of 1.30V at 100A and 15V gate drive, and a thermal resistance from junction to case of 0.125°C/W. The IGBT supports a maximum junction temperature of 150°C and meets international standard package dimensions. Avalanche capability and low gate drive requirements are enabled by its ultra-low VCE(sat) design.

Datasheet Summary
Powered by GS/AI

The IXGK320N60A3 is a 600V punch-through IGBT designed for switching applications up to 5kHz, including motor drives, UPS, SMPS, and PFC circuits. It is packaged in a TO-264 case, measuring 21.34mm in length, 16.13mm in width, and 5.21mm in height, with a weight of 10g. The device has a continuous collector current rating of 210A at 110°C and a peak collector current of 700A at 1ms. It features a maximum collector-emitter saturation voltage of 1.30V at 100A and 15V gate drive, and a thermal resistance from junction to case of 0.125°C/W. The IGBT supports a maximum junction temperature of 150°C and meets international standard package dimensions. Avalanche capability and low gate drive requirements are enabled by its ultra-low VCE(sat) design.

Suppliers

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Supplier Links
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGK320N60A3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
IXGK320N60A3
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGK320N60A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGK320N60A3
Product Name 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
VCES 600 volts
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