Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH36N60A3D4 IXGH36N60A3D4

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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IXGH36N60A3D4 is a 600V punch-through IGBT with an anti-parallel ultrafast diode, designed for switching applications up to 5kHz in power inverters, UPS, motor drives, and PFC circuits. It is housed in a TO-247 package and has a maximum continuous collector current of 36A at 110°C. The collector-emitter saturation voltage is 1.4V at 30A and 15V gate-emitter voltage. Thermal resistance from junction to case is 0.56°C/W for the IGBT and 2.5°C/W for the integrated diode. The device supports a maximum junction temperature of 150°C and has a square reverse bias safe operating area. Mounting torque is 1.13 Nm.

Datasheet Summary
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IXGH36N60A3D4 is a 600V punch-through IGBT with an anti-parallel ultrafast diode, designed for switching applications up to 5kHz in power inverters, UPS, motor drives, and PFC circuits. It is housed in a TO-247 package and has a maximum continuous collector current of 36A at 110°C. The collector-emitter saturation voltage is 1.4V at 30A and 15V gate-emitter voltage. Thermal resistance from junction to case is 0.56°C/W for the IGBT and 2.5°C/W for the integrated diode. The device supports a maximum junction temperature of 150°C and has a square reverse bias safe operating area. Mounting torque is 1.13 Nm.

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Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH36N60A3D4 - IXGH36N60A3D4 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH36N60A3D4
IXGH36N60A3D4
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH36N60A3D4 IXGH36N60A3D4
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH36N60A3D4
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGH36N60A3D4
VCES 600 volts
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