The IXGN82N120B3H1 is a 1200V, 64A continuous current IGBT with an integrated ultra-fast anti-parallel diode, designed for switching applications between 3 and 20 kHz. It is packaged in a SOT-227B miniBLOC case and weighs 30 g. The device has a maximum collector-emitter saturation voltage of 3.2 V at 82 A and 15 V gate drive, and symmetric emitter terminals for main or Kelvin connection. It supports square RBSOA, a maximum junction temperature of 150°C, and thermal resistance from junction to case of 0.21°C/W. The IGBT meets isolation voltage ratings of 2500 V~ RMS and 3000 V~ transient, and is certified to RoHS standards. The diode has a reverse recovery time of 200 ns at 60 A. The product is targeted at power inverters, UPS, SMPS, PFC circuits, welding machines, and lamp ballasts.
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGN82N120B3H1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - PT - Series: Mid-Frequency - IXGN82N120B3H1 |
| VCES | 1200 volts |
