![300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGT32N100A3 - Littelfuse, Inc.](https://partimages.globalspec.com/35/4935/14259935_medium.png)
The IXGT32N100A3 is a 1000 V punch-through IGBT in a TO-268 package, designed for switching applications up to 4 kHz. It features a continuous collector current of 32 A at 110°C, a saturated voltage of 1.90 to 2.2 V at 32 A and 15 V gate drive, and a maximum junction temperature of 150°C. The device is avalanche-rated, has a MOS gate drive for simple control, and its epoxy molding meets UL 94 V-0. Thermal resistance from junction to case is 0.21 °C/W. It is packaged in a standard TO-268 case with three terminals: gate, collector, and emitter.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGT32N100A3 |
| Product Name | 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs |
| VCES | 1000 volts |
