Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3 IXGP28N60A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGP28N60A3 is a 600V, 28A collector current punch-through IGBT in a TO-220 package, designed for switching applications up to 5kHz in power inverters, UPS, motor drives, and PFC circuits. It features a maximum collector-emitter saturation voltage of 1.4V at 24A and 15V gate drive, with a thermal resistance from junction to case of 0.66°C/W. The device supports a maximum junction temperature of 150°C and meets standard international package dimensions. Its square reverse-bias safe operating area and low gate drive requirement make it suitable for rugged, high-power-density designs. The part is qualified for operation from -55°C to 150°C and has a minimum blocking voltage of 600V under specified test conditions.

Datasheet Summary
Powered by GS/AI

The IXGP28N60A3 is a 600V, 28A collector current punch-through IGBT in a TO-220 package, designed for switching applications up to 5kHz in power inverters, UPS, motor drives, and PFC circuits. It features a maximum collector-emitter saturation voltage of 1.4V at 24A and 15V gate drive, with a thermal resistance from junction to case of 0.66°C/W. The device supports a maximum junction temperature of 150°C and meets standard international package dimensions. Its square reverse-bias safe operating area and low gate drive requirement make it suitable for rugged, high-power-density designs. The part is qualified for operation from -55°C to 150°C and has a minimum blocking voltage of 600V under specified test conditions.

Suppliers

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Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3 - IXGP28N60A3 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3
IXGP28N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3 IXGP28N60A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGP28N60A3
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3
VCES 600 volts
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