Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN72N60A3 IXGN72N60A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGN72N60A3 is a 600V punch-through IGBT in an SOT-227B miniBLOC package, designed for low-frequency switching up to 5kHz in applications such as motor drives, UPS, and SMPS. It has a continuous collector current rating of 68A at 110°C and a maximum collector-emitter voltage of 600V. The device features a typical collector-emitter saturation voltage of 1.35V at 60A and 15V gate drive, with a thermal resistance from junction to case of 0.35°C/W. It supports a maximum junction temperature of 150°C, operates within a -55°C to 150°C storage range, and meets the international standard package dimension for SOT-227B. The device exhibits a square reverse-bias safe operating area and has an isolation voltage of 2500 V~ for 1 minute. It is qualified for use in power inverters, battery chargers, and welding machines.

Datasheet Summary
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The IXGN72N60A3 is a 600V punch-through IGBT in an SOT-227B miniBLOC package, designed for low-frequency switching up to 5kHz in applications such as motor drives, UPS, and SMPS. It has a continuous collector current rating of 68A at 110°C and a maximum collector-emitter voltage of 600V. The device features a typical collector-emitter saturation voltage of 1.35V at 60A and 15V gate drive, with a thermal resistance from junction to case of 0.35°C/W. It supports a maximum junction temperature of 150°C, operates within a -55°C to 150°C storage range, and meets the international standard package dimension for SOT-227B. The device exhibits a square reverse-bias safe operating area and has an isolation voltage of 2500 V~ for 1 minute. It is qualified for use in power inverters, battery chargers, and welding machines.

Suppliers

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Product
Description
Supplier Links
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN72N60A3 - IXGN72N60A3 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN72N60A3
IXGN72N60A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN72N60A3 IXGN72N60A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGN72N60A3
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN72N60A3
VCES 600 volts
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