Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN400N30A3 IXGN400N30A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGN400N30A3 is a 300V, 400A Punch Through IGBT designed for switching applications up to 10kHz, including power inverters, UPS, motor drives, and PFC circuits. It is housed in a SOT-227B miniBLOC package, weighing 30 g, with an aluminum nitride isolation base. The device has a maximum collector-emitter voltage of 300 V, continuous collector current of 400 A at 25°C, and a saturated collector-emitter voltage of 1.15 V at 100 A and 15 V gate drive. Thermal resistance from junction to case is 0.17 °C/W, and the device meets IEC 60286-3 and RoHS standards. It supports clamped inductive switching with a reverse bias safe operating area up to 400 A at 125°C and 0.8 • Vₐₑ. The IGBT is qualified for junction temperatures from -55°C to 150°C and maintains low gate drive requirements.

Datasheet Summary
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The IXGN400N30A3 is a 300V, 400A Punch Through IGBT designed for switching applications up to 10kHz, including power inverters, UPS, motor drives, and PFC circuits. It is housed in a SOT-227B miniBLOC package, weighing 30 g, with an aluminum nitride isolation base. The device has a maximum collector-emitter voltage of 300 V, continuous collector current of 400 A at 25°C, and a saturated collector-emitter voltage of 1.15 V at 100 A and 15 V gate drive. Thermal resistance from junction to case is 0.17 °C/W, and the device meets IEC 60286-3 and RoHS standards. It supports clamped inductive switching with a reverse bias safe operating area up to 400 A at 125°C and 0.8 • Vₐₑ. The IGBT is qualified for junction temperatures from -55°C to 150°C and maintains low gate drive requirements.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN400N30A3 - IXGN400N30A3 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN400N30A3
IXGN400N30A3
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN400N30A3 IXGN400N30A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGN400N30A3
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGN400N30A3
VCES 300 volts
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