Littelfuse, Inc. 300V - 1400V [>40 kHz] PT (Punch Through) IGBTs IXGH24N120C3H1

Description
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
  • 300V - 1400V [>40 kHz] PT (Punch Through) IGBTs - IXGH24N120C3H1 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
Datasheet
Datasheet Summary
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The IXGH24N120C3H1 is a 1200V punch-through IGBT with an integrated anti-parallel fast recovery diode, designed for high-frequency switching applications up to 50 kHz. It is packaged in a TO-247AD case, measuring 19.6 mm × 5.2 mm × 20.5 mm, and has a continuous collector current rating of 48 A at 25°C and 24 A at 100°C. The collector-emitter saturation voltage is 3.6 V to 4.2 V at 24 A and 15 V gate-emitter voltage. Junction temperature range is -55°C to 150°C. Thermal resistance from junction to case is 0.50°C/W for the IGBT and 0.9°C/W for the diode. The device is avalanche rated and features a soft-recovery trench-FRD diode with reverse recovery time of 70 ns and peak reverse recovery current of 19 A. It is optimized for AC motor control, DC servo drives, choppers, and uninterruptible power supplies.

Datasheet Summary
Powered by GS/AI

The IXGH24N120C3H1 is a 1200V punch-through IGBT with an integrated anti-parallel fast recovery diode, designed for high-frequency switching applications up to 50 kHz. It is packaged in a TO-247AD case, measuring 19.6 mm × 5.2 mm × 20.5 mm, and has a continuous collector current rating of 48 A at 25°C and 24 A at 100°C. The collector-emitter saturation voltage is 3.6 V to 4.2 V at 24 A and 15 V gate-emitter voltage. Junction temperature range is -55°C to 150°C. Thermal resistance from junction to case is 0.50°C/W for the IGBT and 0.9°C/W for the diode. The device is avalanche rated and features a soft-recovery trench-FRD diode with reverse recovery time of 70 ns and peak reverse recovery current of 19 A. It is optimized for AC motor control, DC servo drives, choppers, and uninterruptible power supplies.

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300V - 1400V [>40 kHz] PT (Punch Through) IGBTs - IXGH24N120C3H1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
300V - 1400V [>40 kHz] PT (Punch Through) IGBTs
IXGH24N120C3H1
300V - 1400V [>40 kHz] PT (Punch Through) IGBTs IXGH24N120C3H1
GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT

GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range. 1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market. To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. High current handling capability International standard packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH24N120C3H1
Product Name 300V - 1400V [>40 kHz] PT (Punch Through) IGBTs
VCES 1200 volts
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