Littelfuse, Inc. 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGX55N120A3H1

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGX55N120A3H1 is a 1200V punch-through IGBT with an integrated ultrafast diode, packaged in a PLUS247TM case, weighing 6 g. It has a continuous collector current rating of 55 A at 110°C and a peak collector current of 400 A for 1 ms. The collector-emitter saturation voltage is 2.3 V maximum at 55 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.27 °C/W. It is designed for applications such as power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protection, with operation suited for switching frequencies up to 3 kHz.

Datasheet Summary
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The IXGX55N120A3H1 is a 1200V punch-through IGBT with an integrated ultrafast diode, packaged in a PLUS247TM case, weighing 6 g. It has a continuous collector current rating of 55 A at 110°C and a peak collector current of 400 A for 1 ms. The collector-emitter saturation voltage is 2.3 V maximum at 55 A and 15 V gate-emitter voltage. Thermal resistance from junction to case is 0.27 °C/W. It is designed for applications such as power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protection, with operation suited for switching frequencies up to 3 kHz.

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300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGX55N120A3H1 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
IXGX55N120A3H1
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGX55N120A3H1
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGX55N120A3H1
Product Name 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
VCES 1200 volts
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