The IXGA8N100 is an insulated gate bipolar transistor (IGBT) in a TO-263AA surface-mount package, rated for a collector-emitter voltage of 1000 V and a continuous collector current of 16 A at 25 °C, reducing to 8 A at 90 °C. It features a typical collector-emitter saturation voltage of 2.7 V at 16 A and 15 V gate-emitter drive, with a maximum junction temperature of 150 °C and thermal resistance from junction to case of 2.3 K/W. The device supports clamped inductive switching with a safe operating area of 16 A at 800 V and includes a MOS gate for simple drive circuits. It meets JEDEC TO-263AA package standards and is suitable for applications such as motor control, DC choppers, and UPS systems.
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGA8N100 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGA8N100 |
| VCES | 1000 volts |
