Littelfuse, Inc. 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGK82N120A3

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGK82N120A3 is a 1200V punch-through IGBT designed for switching applications up to 3kHz, such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-264 case with a weight of 10g and features a maximum collector-emitter voltage of 1200V, a continuous collector current of 82A at 110°C, and a collector-emitter saturation voltage of 2.05V max at 82A and 25°C. The device meets AEC-Q200 and RoHS standards, operates from -55°C to 150°C junction temperature, and has a thermal resistance from junction to case of 0.15°C/W. Its ultra-low Vsat design minimizes conduction losses.

Datasheet Summary
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The IXGK82N120A3 is a 1200V punch-through IGBT designed for switching applications up to 3kHz, such as power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-264 case with a weight of 10g and features a maximum collector-emitter voltage of 1200V, a continuous collector current of 82A at 110°C, and a collector-emitter saturation voltage of 2.05V max at 82A and 25°C. The device meets AEC-Q200 and RoHS standards, operates from -55°C to 150°C junction temperature, and has a thermal resistance from junction to case of 0.15°C/W. Its ultra-low Vsat design minimizes conduction losses.

Suppliers

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300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs - IXGK82N120A3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
IXGK82N120A3
300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs IXGK82N120A3
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGK82N120A3
Product Name 300V - 1200V [DC - 15 kHz] PT (Punch Through) IGBTs
VCES 1200 volts
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