Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3M IXGP28N60A3M

Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Description
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.
Datasheet
Datasheet Summary
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The IXGP28N60A3M is a 600 V, 15 A punch-through IGBT in an overmolded TO-220 package, optimized for switching applications up to 5 kHz in power inverters, UPS, motor drives, and PFC circuits. It features a maximum collector-emitter saturation voltage of 1.4 V at 25°C and 1.3 V at 125°C, with a continuous collector current rating of 15 A at 110°C and a peak current of 200 A for 1 ms. The device has a thermal resistance from junction to case of 1.94 °C/W and a maximum junction temperature of 150°C. It supports a gate-emitter voltage range of ±20 V continuous and ±30 V transient, with a square RBSOA and low gate drive requirements. Weight is 3.0 g and mounting torque is 1.13 Nm.

Datasheet Summary
Powered by GS/AI

The IXGP28N60A3M is a 600 V, 15 A punch-through IGBT in an overmolded TO-220 package, optimized for switching applications up to 5 kHz in power inverters, UPS, motor drives, and PFC circuits. It features a maximum collector-emitter saturation voltage of 1.4 V at 25°C and 1.3 V at 125°C, with a continuous collector current rating of 15 A at 110°C and a peak current of 200 A for 1 ms. The device has a thermal resistance from junction to case of 1.94 °C/W and a maximum junction temperature of 150°C. It supports a gate-emitter voltage range of ±20 V continuous and ±30 V transient, with a square RBSOA and low gate drive requirements. Weight is 3.0 g and mounting torque is 1.13 Nm.

Suppliers

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Product
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Supplier Links
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3M - IXGP28N60A3M - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3M
IXGP28N60A3M
Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3M IXGP28N60A3M
The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated Ultrafast FRED diode.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGP28N60A3M
Product Name Power Semiconductors & Control ICs - IGBTs - PT - Series: Low-Frequency - IXGP28N60A3M
VCES 600 volts
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